D. V. Davydov

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

N.S. Savkina, A. А. Lebedev, D. V. Davydov et al. · Materials Science and Engineering B · 2000 · 44 citations

Materials Engineering, Sublimation Epitaxy, Materials Science +5

Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers

N. M. Shmidt, D. V. Davydov, V. V. Emtsev et al. · physica status solidi (b) · 1999 · 39 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9

DLTS study of defects in 6H- and 4H-SiC created by proton irradiation

D. V. Davydov, A. А. Lebedev, V. V. Kozlovski et al. · Physica B Condensed Matter · 2001 · 23 citations

Materials Engineering, Engineering, Physics +6

MOVPE of III-N LED structures with short technological process

W. V. Lundin, D. V. Davydov, E. E. Zavarin et al. · Technical Physics Letters · 2015 · 21 citations

Radiation hardness of SiC based ions detectors for influence of the relative protons

N. B. Strokan, D. V. Davydov, N.S. Savkina et al. · Applied Surface Science · 2001 · 20 citations

Radiation Detection, Physics, Nuclear Physics +8