E. E. Zavarin

Hydrogen effects in III-nitride MOVPE

E.V. Yakovlev, A.S. Segal, A.V. Lobanova et al. · Journal of Crystal Growth · 2008 · 49 citations

Engineering, Hydrogen Transition, Hydrogen Effects +4

Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity

G. É. Shaĭbler, A. S. Yaroshevich, S.V. Shevelev et al. · Physics of the Solid State · 2004 · 48 citations

Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study

A.V. Kondratyev, W. V. Lundin, A. V. Sakharov et al. · Journal of Crystal Growth · 2004 · 42 citations

Materials Engineering, Materials Science, Electrical Engineering +4

Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

V. A. Shalygin, M. D. Moldavskaya, M. Ya. Vinnichenko et al. · Journal of Applied Physics · 2019 · 41 citations · Full text

Thz Photonics, Terahertz Technology, Excited 2D +20

High-confinement gallium nitride-on-sapphire waveguides for integrated nonlinear photonics

Erik Stassen, Minhao Pu, Elizaveta Semenova et al. · Optics Letters · 2019 · 40 citations