Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

T. Dalibor, Gerhard Pensl, H. Matsunami et al. · physica status solidi (a) · 1997 · 426 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Site-competition epitaxy for superior silicon carbide electronics

David Larkin, Philip G. Neudeck, J. A. Powell et al. · Applied Physics Letters · 1994 · 321 citations

Engineering, Materials Engineering, Materials Science +16

Photoluminescence Due to Al, Ga, and B Acceptors in 4H‐, 6H‐, and 3 C  ‐ SiC Grown from a Si Melt

Akira Suzuki, H. Matsunami, T. Tanaka · Journal of The Electrochemical Society · 1977 · 61 citations

Engineering, Materials Engineering, Materials Science +17

Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system

M. M. Anikin, A. A. Lebedev, S.N. Pyatko et al. · Materials Science and Engineering B · 1992 · 29 citations

Engineering, Materials Engineering, Materials Science +14

Measurement of electrophysical properties of silicon carbide epitaxial films

A. А. Lebedev, V. E. Chelnokov · Diamond and Related Materials · 1994 · 22 citations

Natural Sciences, Materials Science, Physics +14