David Larkin

Site-competition epitaxy for superior silicon carbide electronics

David Larkin, Philip G. Neudeck, J. A. Powell et al. · Applied Physics Letters · 1994 · 321 citations

Engineering, Materials Engineering, Materials Science +16

SiC Dopant Incorporation Control Using Site-Competition CVD

David Larkin · physica status solidi (b) · 1997 · 140 citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence and transport studies of boron in 4H SiC

S.G. Sridhara, L. L. Clemen, Robert P. Devaty et al. · Journal of Applied Physics · 1998 · 128 citations

Natural Sciences, Materials Science, Physics +17

Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide

J. A. Powell, David Larkin · physica status solidi (b) · 1997 · 127 citations

Engineering, Materials Engineering, Materials Science +17

Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

J. A. Powell, David Larkin, L. G. Matus et al. · Applied Physics Letters · 1990 · 125 citations

Natural Sciences, Materials Engineering, Materials Science +17