Robert P. Devaty

Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths

S.G. Sridhara, T.J Eperjesi, Robert P. Devaty et al. · Materials Science and Engineering B · 1999 · 145 citations

Materials Science, Photonics, Optical Materials +12

Field effect in epitaxial graphene on a silicon carbide substrate

Gong Gu, Shu Nie, R. M. Feenstra et al. · Applied Physics Letters · 2007 · 139 citations · Full text

Materials Science, Graphene Nanomeshes, Electrical Engineering +11

Photoluminescence and transport studies of boron in 4H SiC

S.G. Sridhara, L. L. Clemen, Robert P. Devaty et al. · Journal of Applied Physics · 1998 · 128 citations

Engineering, Transport Studies, Borophene +16

Nitrogen donors and deep levels in high-quality 4H–SiC epilayers grown by chemical vapor deposition

Tsunenobu Kimoto, Akira Itoh, H. Matsunami et al. · Applied Physics Letters · 1995 · 118 citations

Engineering, Optoelectronic Devices, Semiconductor Nanostructures +16

Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å

S.G. Sridhara, Robert P. Devaty, W. J. Choyke · Journal of Applied Physics · 1998 · 115 citations

Materials Science, Materials Engineering, Electrical Engineering +15