N.S. Savkina

Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov et al. · Journal of Applied Physics · 2000 · 105 citations

Materials Engineering, Semiconductors, Electrical Engineering +12

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

N.S. Savkina, A. А. Lebedev, D. V. Davydov et al. · Materials Science and Engineering B · 2000 · 44 citations

Materials Engineering, Sublimation Epitaxy, Materials Science +5

DLTS study of defects in 6H- and 4H-SiC created by proton irradiation

D. V. Davydov, A. А. Lebedev, V. V. Kozlovski et al. · Physica B Condensed Matter · 2001 · 23 citations

Materials Engineering, Engineering, Physics +6

UV photodetectors in 6HSiC

M. M. Anikin, A. N. Andreev, S.N. Pyatko et al. · Sensors and Actuators A Physical · 1992 · 22 citations

Effect of boron diffusion on the high-voltage behavior of 6H-SiC <i>p</i>+<i>nn</i>+ structures

S. Ortolland, Christophe Raynaud, J.P. Chante et al. · Journal of Applied Physics · 1996 · 22 citations · Full text

Materials Engineering, Semiconductors, Electrical Engineering +14