A. S. Tregubova

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

N.S. Savkina, A. А. Lebedev, D. V. Davydov et al. · Materials Science and Engineering B · 2000 · 44 citations

Engineering, Materials Engineering, Materials Science +14

Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

S. Rendakova, A. S. Tregubova, V. Dmitriev · Journal of Electronic Materials · 1998 · 31 citations

Engineering, Materials Engineering, Materials Science +16

Epitaxial growth of silicon carbide layers by sublimation “Sandwich method” (II) structural defects and growth mechanism

E. N. Mokhov, I. L. Shul’pina, A. S. Tregubova et al. · Kristall und Technik · 1981 · 26 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

A. А. Lebedev, Anatoly M. Strel’chuk, Denis Davydov et al. · Applied Surface Science · 2001 · 22 citations

Engineering, Electrical Engineering, Materials Science +15

HVPE GaN growth on porous SiC with closed surface porosity

M. G. Mynbaeva, A. S. Tregubova, K. D. Mynbaev · Journal of Crystal Growth · 2007 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +16