Statistics
Publications
11
Citations
204
H-Index
11
Active since
1996
S. Rendakova is an author at Ioffe Institute specializing in engineering, applied physics, and materials science.
Publications per year
1996–2001
11
11
High-dose Al-implanted 4H-SiC p+-n-n+ junctions
E. V. Kalinina, G. Kholujanov, Anatoly M. Strel’chuk et al. · Applied Physics Letters · 2000 · 20 citations
Materials Engineering, Semiconductors, Electrical Engineering +12
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