V. Ivantsov

Thick AlN layers grown by HVPE

O. V. Kovalenkov, V. Soukhoveev, V. Ivantsov et al. · Journal of Crystal Growth · 2005 · 69 citations

Materials Science, Materials Engineering, Aluminium Nitride +6

High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy

S. Rendakova, V. Ivantsov, V. Dmitriev · Materials science forum · 1998 · 34 citations

Materials Engineering, Materials Science, Electrical Engineering +7

Electrical and optical properties of thick highly doped p‐type GaN layers grown by HVPE

A. Usikov, O. V. Kovalenkov, V. Soukhoveev et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 29 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN

T. H. Myers, Brenda L. VanMil, L.J. Holbert et al. · Journal of Crystal Growth · 2002 · 22 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10

AlN substrates: fabrication via vapor phase growth and characterization

Yu. Melnik, V. Soukhoveev, V. Ivantsov et al. · physica status solidi (a) · 2003 · 20 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +18