T. H. Myers

Faceted inversion domain boundary in GaN films doped with Mg

Lucia Romano, John E. Northrup, A. J. Ptak et al. · Applied Physics Letters · 2000 · 119 citations

Wide-bandgap Semiconductor, Engineering, Film Polarity Changes +16

Photoluminescence of CdTe: A comparison of bulk and epitaxial material

N. C. Giles‐Taylor, R. N. Bicknell, D. K. Blanks et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1985 · 113 citations

Engineering, Luminescence Property, Band Gap +17

Bulk transport measurements in ZnO: The effect of surface electron layers

Martin Allen, C. H. Swartz, T. H. Myers et al. · Physical Review B · 2010 · 112 citations

Engineering, Surface Electron Layers, Downward Band Bending +17

Buried p-type layers in Mg-doped InN

P. A. Anderson, C. H. Swartz, D.A. Carder et al. · Applied Physics Letters · 2006 · 100 citations

Materials Science, Magnetism, Electrical Engineering +12

Optical properties of polycrystalline CdTe films

T. H. Myers, S. W. Edwards, J. F. Schetzina · Journal of Applied Physics · 1981 · 98 citations · Full text

Materials Science, Ii-vi Semiconductor, Optical Materials +10