Publication | Closed Access
Bulk transport measurements in ZnO: The effect of surface electron layers
112
Citations
33
References
2010
Year
EngineeringSurface Electron LayersDownward Band BendingCharge TransportMagnetismSurface ConductivityNanoelectronicsX-ray Photoemission SpectroscopyTransport PhenomenaCharge Carrier TransportBulk Transport MeasurementsMaterials ScienceElectrical EngineeringOxide ElectronicsSurface CharacterizationMaterial AnalysisSurface AnalysisSurface ScienceApplied PhysicsCondensed Matter Physics
Magnetotransport measurements and x-ray photoemission spectroscopy were used to investigate the surface conductivity of ZnO. Near-surface downward band bending, consistent with electron accumulation, was found on the polar and nonpolar faces of bulk ZnO single crystals. A significant polarity effect was observed in that the downward band bending was consistently stronger on the Zn-polar face and weaker on the O-polar face. The surface electron accumulation layer was found to significantly influence the electrical properties of high resistivity, hydrothermally grown bulk ZnO crystals at temperatures below 200 K, and is largely responsible for the anomalously low electron mobility reported for this material.
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