Martin Allen - Concepedia

Author

Martin Allen

Also Known As

Allen, Martin, Allen, Martin Ward, Collaborators:, D Stillwell, Fabrizio Rossini, G Chang, J Agin, K Connor, M Allen, M W Allen

205

Publications

Citations

H-Index

173

Concepts

All Affiliations

University of Canterbury MacDiarmid Institute for Advanced Materials and Nanotechnology National Institute of Water and Atmospheric Research Leipzig University Kochi University of Technology

About

Martin Allen is an author at University of Canterbury specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	53	2.6K
2	Medicine	8	8	385
3	Health Sciences	3	3	61
4	Business	2	2	98
5	Education	1	1	12

Martin Allen

Publications

3.6K

Citations

H-Index

Page 1

	Year	Citations
Influence of oxygen vacancies on Schottky contacts to ZnO Martin Allen, S. M. Durbin Applied Physics Letters Materials ScienceMaterials EngineeringOxygen VacanciesNanoengineeringEngineering	2008	237
Antibody variable region interactions with Protein A: Implications for the development of generic purification processes Sanchayita Ghose, Martin Allen, Brian Hubbard, Biotechnology and Bioengineering Immunocytochemical TechniqueImmunologyMolecular BiologyElution PhProtein Purification	2005	164
Silver oxide Schottky contacts on n-type ZnO Martin Allen, S. M. Durbin, James B. Metson Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringHydrothermal Zno	2007	151
Metal Schottky diodes on Zn-polar and O-polar bulk ZnO Martin Allen, Maan M. Alkaisi, S. M. Durbin Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringO-polar Bulk Zno	2006	148
Mist-CVD Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\alpha $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> MESFETs Giang T. Dang, Toshiyuki Kawaharamura, Mamoru Furuta, IEEE Transactions on Electron Devices EngineeringAtmospheric PressureSemiconductor MaterialsOptoelectronic DevicesThin Film Process Technology	2015	121
Bulk transport measurements in ZnO: The effect of surface electron layers Martin Allen, C. H. Swartz, T. H. Myers, Physical Review B EngineeringSurface Electron LayersDownward Band BendingCharge TransportMagnetism	2010	112
Influence of polarity and hydroxyl termination on the band bending at ZnO surfaces Robert Heinhold, G. T. Williams, Simon P. Cooil, Physical Review B Materials ScienceHydroxyl TerminationSurface CharacterizationEngineeringPhysics	2013	108
Influence of spontaneous polarization on the electrical and optical properties of bulk, single crystal ZnO Martin Allen, Paul L. Miller, Roger J. Reeves, Applied Physics Letters Materials ScienceSignificant PolarityElectrical EngineeringOptical MaterialsEngineering	2007	102
The demonstration of B‐cell, T‐cell and myeloid antigens in paraffin sections K. West, Anthony Warford, Linley M. Fray, The Journal of Pathology	1986	94
Degradation of oxynitride gate dielectric reliability due to boron diffusion D. Wristers, L.K. Han, T. Chen, Applied Physics Letters EngineeringOptoelectronic DevicesSemiconductor DeviceSemiconductorsBoron Diffusion	1996	92

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