Mist-CVD Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\alpha $ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> MESFETs

Abstract

This paper demonstrates the use of cost-effective solution-processed α-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin films (TFs) for electronic device applications. MESFETs based on AgO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Schottky diode (SD) gates were fabricated on highly crystalline Sn-doped α-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> TFs, grown by mist chemical vapor deposition at atmospheric pressure and a substrate temperature of only 400°C. The rectification ratio and reverse breakdown voltage of typical SDs were 6 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> and 19.6 V, respectively. The ON-OFF ratio of the corresponding transistors was 2 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> . The MESFETs that could withstand drain voltages of up to 48 V were also realized.