J. F. Schetzina - Concepedia

Author

J. F. Schetzina

North Carolina State University

Also Known As

G. Cantwell, J F Schetzina, J. F. SCHETZINA, J. F. Schetzina, J.F. Schetzina

259

Publications

5.4K

Citations

H-Index

Concepts

All Affiliations

North Carolina State University Purdue University West Lafayette Wolfspeed, Inc. (United States)United States Naval Research Laboratory

About

J. F. Schetzina is an author at North Carolina State University specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	35	118	4.4K
2	Applied Physics	35	117	4.4K
3	Natural Sciences	8	8	286
4	Chemistry	7	7	222
5	Chemical Engineering	1	1	47

J. F. Schetzina

127

Publications

4.9K

Citations

H-Index

Page 1

	Year	Citations
Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates W. C. Hughes, W. H. Rowland, Mark A. Johnson, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceGan Film QualityElectrical EngineeringAluminium NitrideEngineering	1995	188
Properties of CdZnTe crystals grown by a high pressure Bridgman method F. Patrick Doty, J.F. Butler, J. F. Schetzina, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials EngineeringMaterials ScienceCdznte CrystalsHigh-pressure BridgmanInert Gas	1992	181
MBE Growth and Properties of ZnO on Sapphire and SiC Substrates Mark A. Johnson, Shizυo Fujita, W. H. Rowland, Materials EngineeringMaterials ScienceAluminium NitrideEngineeringOxide Electronics	1995	171
Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys John F. Muth, J.D. Brown, Mark A. Johnson, MRS Internet Journal of Nitride Semiconductor Research	1999	166
Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC G. E. Bulman, K. Doverspike, S.T. Sheppard, Electronics Letters	1997	135
Cd1−<i>x</i>Mn<i>x</i>Te-CdTe multilayers grown by molecular beam epitaxy R. N. Bicknell, R. W. Yanka, N. C. Giles‐Taylor, Applied Physics Letters Materials ScienceSemiconductorsX-ray Diffraction SatellitesEngineeringCrystalline Defects	1984	128
High resolution electron microscope study of epitaxial CdTe-GaAs interfaces N. Ōtsuka, L. A. Kolodziejski, R. L. Gunshor, Applied Physics Letters SemiconductorsMaterials ScienceGaas CrystalsHigh ResolutionEngineering	1985	121
ZnSe light-emitting diodes Jing Ren, Karen Bowers, B. Sneed, Applied Physics Letters Materials ScienceSuccessful FabricationElectrical EngineeringN-type DopantsEngineering	1990	116
Photoluminescence of CdTe: A comparison of bulk and epitaxial material N. C. Giles‐Taylor, R. N. Bicknell, D. K. Blanks, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringLuminescence PropertyBand GapSemiconductorsIi-vi Semiconductor	1985	113
Growth of high mobility <i>n</i>-type CdTe by photoassisted molecular beam epitaxy R. N. Bicknell, N. C. Giles, J. F. Schetzina Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringIi-vi SemiconductorEngineering	1986	111

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