J. F. Schetzina

Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates

W. C. Hughes, W. H. Rowland, Mark A. Johnson et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 188 citations

Materials Science, Gan Film Quality, Electrical Engineering +13

Properties of CdZnTe crystals grown by a high pressure Bridgman method

F. Patrick Doty, J.F. Butler, J. F. Schetzina et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 181 citations

Materials Engineering, Materials Science, Cdznte Crystals +13

MBE Growth and Properties of ZnO on Sapphire and SiC Substrates

Mark A. Johnson, Shizυo Fujita, W. H. Rowland et al. · 1995 · 171 citations

Materials Engineering, Materials Science, Aluminium Nitride +8

Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys

John F. Muth, J.D. Brown, Mark A. Johnson et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 166 citations

Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC

G. E. Bulman, K. Doverspike, S.T. Sheppard et al. · Electronics Letters · 1997 · 135 citations