W. H. Rowland

MBE growth and properties of ZnO on sapphire and SiC substrates

Mark A. Johnson, Shizυo Fujita, W. H. Rowland et al. · Journal of Electronic Materials · 1996 · 196 citations

Materials Engineering, Materials Science, Aluminium Nitride +8

Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates

W. C. Hughes, W. H. Rowland, Mark A. Johnson et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 188 citations

Materials Science, Gan Film Quality, Electrical Engineering +13

MBE Growth and Properties of ZnO on Sapphire and SiC Substrates

Mark A. Johnson, Shizυo Fujita, W. H. Rowland et al. · 1995 · 171 citations

Materials Engineering, Materials Science, Aluminium Nitride +8

Growth of device quality GaN at 550 °C by atomic layer epitaxy

N.H. Karam, T. Parodos, P. C. Colter et al. · Applied Physics Letters · 1995 · 66 citations

Wide-bandgap Semiconductor, Engineering, Atomic Layer Epitaxy +17

Molecular beam epitaxy growth and properties of GaN, Al<i>x</i>Ga1−<i>x</i>N, and AlN on GaN/SiC substrates

Mark A. Johnson, Shizυo Fujita, W. H. Rowland et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 60 citations

Materials Science, Materials Engineering, Electrical Engineering +15