Growth of device quality GaN at 550 °C by atomic layer epitaxy

Abstract

GaN single crystal films were grown by atomic layer epitaxy at 550 °C. The room temperature photoluminescence properties of these low-temperature-grown films are dominated by band edge emission with intensity comparable to those grown by metalorganic chemical vapor deposition at 1000 °C. The as-grown films have background-carrier concentrations that can be controlled to levels in the 1016/cm−3 range. Atomic layer epitaxy is therefore a good approach to the low temperature growth of nitride compounds.