T. Parodos

Growth of device quality GaN at 550 °C by atomic layer epitaxy

N.H. Karam, T. Parodos, P. C. Colter et al. · Applied Physics Letters · 1995 · 66 citations

Wide-bandgap Semiconductor, Engineering, Atomic Layer Epitaxy +17

HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiode Arrays

M. B. Reine, J. Marciniec, K. Wong et al. · Journal of Electronic Materials · 2007 · 45 citations

Electrical Engineering, Engineering, Electronic Engineering +3

Understanding ion-milling damage in Hg1−xCdxTe epilayers

Changzhen Wang, David J. Smith, Steve Tobin et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2006 · 37 citations

Materials Engineering, Materials Science, Ion Implantation +12

Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes

M. B. Reine, J. Marciniec, K. Wong et al. · Journal of Electronic Materials · 2008 · 26 citations

Electrical Engineering, Engineering, Applied Physics +2

Advances in composition control for 16 µm LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60K

S. P. Tobin, M. Weiler, Mark A. Hutchins et al. · Journal of Electronic Materials · 1999 · 21 citations

Photonics, Electrical Engineering, Remote Sensing Applications +8