G. E. Bulman - Concepedia

Author

G. E. Bulman

Wolfspeed, Inc. (United States)ORCID

Also Known As

G. Bulman, G. Bulman*, G. E. Bulman, G.E. Bulman, Gary Bulman, Gary E. Bulman

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

Wolfspeed, Inc. (United States)University of Illinois Urbana-Champaign RTI International Cree (China)North Carolina State University

About

G. E. Bulman is an author at Wolfspeed, Inc. (United States) specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	28	1.6K
2	Applied Physics	19	27	1.5K
3	Chemical Engineering	6	6	455
4	Natural Sciences	1	1	10
5	Chemistry	1	1	10

G. E. Bulman

Publications

Citations

H-Index

Page 1

	Year	Citations
Highly anisotropic photoenhanced wet etching of n-type GaN C. Youtsey, I. Adesida, G. E. Bulman Applied Physics Letters Materials ScienceChemical EngineeringSolid-state LightingEngineeringApplied Physics	1997	207
Superlattice-based thin-film thermoelectric modules with high cooling fluxes G. E. Bulman, Phil Barletta, Jay Lewis, Nature Communications	2016	187
Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements L. W. Cook, G. E. Bulman, G. E. Stillman Applied Physics Letters EngineeringSemiconductor MaterialsOptoelectronic DevicesSemiconductorsElectronic Devices	1982	159
Smooth n-type GaN surfaces by photoenhanced wet etching C. Youtsey, I. Adesida, Lucia Romano, Applied Physics Letters Koh SolutionEngineeringElectron-beam LithographyGan SurfacesSurface Processing	1998	152
The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements G. E. Bulman, V. M. Robbins, G. E. Stillman IEEE Transactions on Electron Devices Electron Dead SpaceEngineeringImpact Ionization CoefficientsSemiconductorsIon Implantation	1985	143
Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC G. E. Bulman, K. Doverspike, S.T. Sheppard, Electronics Letters	1997	135
Experimental determination of impact ionization coefficients in G. E. Bulman, V. M. Robbins, Kevin F. Brennan, IEEE Electron Device Letters Room-temperature ElectronEngineeringImpact Ionization CoefficientsPhysicsImpact (Mechanics)	1983	135
Dopant-selective photoenhanced wet etching of GaN C. Youtsey, G. E. Bulman, I. Adesida Journal of Electronic Materials Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceCategoryiii-v Semiconductor	1998	83
Strain determination in heteroepitaxial GaN B. J. Skromme, He Zhao, D. Wang, Applied Physics Letters Materials ScienceSemiconductor TechnologyWide-bandgap SemiconductorEngineeringA Free Exciton	1997	72
Gain characteristics of InGaN/GaN quantum well diode lasers Y.-K. Song, Martin Kuball, A. V. Nurmikko, Applied Physics Letters Moderate Current DensityPhotonicsEngineeringPhysicsSemiconductor Lasers	1998	60

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