G. E. Bulman

Highly anisotropic photoenhanced wet etching of n-type GaN

C. Youtsey, I. Adesida, G. E. Bulman · Applied Physics Letters · 1997 · 207 citations

Materials Science, Chemical Engineering, Solid-state Lighting +12

Superlattice-based thin-film thermoelectric modules with high cooling fluxes

G. E. Bulman, Phil Barletta, Jay Lewis et al. · Nature Communications · 2016 · 187 citations · Full text

Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements

L. W. Cook, G. E. Bulman, G. E. Stillman · Applied Physics Letters · 1982 · 159 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +20

Smooth n-type GaN surfaces by photoenhanced wet etching

C. Youtsey, I. Adesida, Lucia Romano et al. · Applied Physics Letters · 1998 · 152 citations

Koh Solution, Engineering, Electron-beam Lithography +17

The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements

G. E. Bulman, V. M. Robbins, G. E. Stillman · IEEE Transactions on Electron Devices · 1985 · 143 citations

Electron Dead Space, Engineering, Impact Ionization Coefficients +18