L. W. Cook - Concepedia

Author

L. W. Cook

University of Illinois Urbana-Champaign

Also Known As

L. Cook, L. W. Cook, L.W. Cook

Publications

745

Citations

H-Index

Concepts

All Affiliations

University of Illinois Urbana-Champaign

About

L. W. Cook is an author at University of Illinois Urbana-Champaign specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	692
2	Applied Physics	15	17	673
3	Chemical Engineering	3	3	42
4	Chemistry	2	2	21
5	Natural Sciences	1	1	10

L. W. Cook

Publications

705

Citations

H-Index

Page 1

	Year	Citations
Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements L. W. Cook, G. E. Bulman, G. E. Stillman Applied Physics Letters EngineeringSemiconductor MaterialsOptoelectronic DevicesSemiconductorsElectronic Devices	1982	159
The electron velocity-field characteristic for n-In<sub>0.53</sub>Ga<sub>0.47</sub>As at 300 K T. H. Windhorn, L. W. Cook, G. E. Stillman IEEE Electron Device Letters Electrical EngineeringEngineeringPhysicsElectron SpectroscopyElectron Drift Velocities	1982	84
Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques Mei Feng, L. W. Cook, M. M. Tashima, Journal of Electronic Materials Materials ScienceMaterial AnalysisEngineeringCrystal Growth TechnologySurface Science	1980	57
High purity InP and InGaAsP grown by liquid phase epitaxy L. W. Cook, M. M. Tashima, N. Tabatabaie, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringHigh Purity InpApplied Physics	1982	50
Electron transport in InP at high electric fields T. H. Windhorn, L. W. Cook, M. A. Haase, Applied Physics Letters Electron Drift VelocityElectrical EngineeringEngineeringRf SemiconductorPhysics	1983	46
Long-wavelength (1.3- to 1.6-&#181;m) detectors for fiber-optical communications G. E. Stillman, L. W. Cook, G. E. Bulman, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesFiber Optics	1982	33
Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fields T. H. Windhorn, L. W. Cook, G. E. Stillman Journal of Electronic Materials Electrical EngineeringEngineeringPhysicsElectron SpectroscopyApplied Physics	1982	32
InGaAsP photodiodes G. E. Stillman, L. W. Cook, N. Tabatabaie, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorPhotonicsElectrical EngineeringEngineeringRf Semiconductor	1983	32
Be-implanted 1.3-μm InGaAsP avalanche photodetectors M. Feng, J. D. Oberstar, T. H. Windhorn, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesSemiconductors	1979	28
Auger profile study of the influence of lattice mismatch on the LPE InGaAsP-InP heterojunction interface M. Feng, L. W. Cook, M. M. Tashima, Applied Physics Letters SemiconductorsElectrical EngineeringAuger Depth ProfilesEngineeringChemical Transition Width	1979	25

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