M. M. Tashima - Concepedia

Author

M. M. Tashima

University of Illinois Urbana-Champaign

Also Known As

M. M. Tashima, M. Tashima, M.M. Tashima, Mark M. Tashima, Mark Tashima

Publications

599

Citations

H-Index

Concepts

All Affiliations

University of Illinois Urbana-Champaign JDSU (United States)University of Virginia

About

M. M. Tashima is an author at University of Illinois Urbana-Champaign specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	15	536
2	Applied Physics	15	16	549
3	Electrical Engineering	7	7	275
4	Materials Engineering	5	5	148
5	Computer Engineering	1	1	16

M. M. Tashima

Publications

549

Citations

H-Index

Page 1

	Year	Citations
Reduce Afterpulsing of Single Photon Avalanche Diodes Using Passive Quenching With Active Reset Mingguo Liu, Chong Hu, Joe C. Campbell, IEEE Journal of Quantum Electronics PhotonicsElectrical EngineeringEngineeringApplied PhysicsReduce Afterpulsing	2008	74
High-Performance InGaAs/InP Single-Photon Avalanche Photodiode Mingguo Liu, Chong Hu, Xiaogang Bai, IEEE Journal of Selected Topics in Quantum Electronics Timing ResolutionPhotonicsElectrical EngineeringPhotoelectric SensorGated Mode	2007	71
Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques Mei Feng, L. W. Cook, M. M. Tashima, Journal of Electronic Materials Materials ScienceMaterial AnalysisEngineeringCrystal Growth TechnologySurface Science	1980	57
High purity InP and InGaAsP grown by liquid phase epitaxy L. W. Cook, M. M. Tashima, N. Tabatabaie, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringHigh Purity InpApplied Physics	1982	50
Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region M. Feng, T. H. Windhorn, M. M. Tashima, Applied Physics Letters Heterojunction PhotodiodesEngineeringCrystal Growth TechnologyOptoelectronic DevicesSemiconductors	1978	42
The effects of the growth temperature on AlxGal-xAs (0≤ x ≤0.37) LED materials grown by OM-VPE M.-J. Tsai, M. M. Tashima, R. L. Moon Journal of Electronic Materials Materials EngineeringMaterials ScienceSolid-state LightingGrowth TemperatureLed Materials	1984	40
Low Dark Count Rate and High Single-Photon Detection Efficiency Avalanche Photodiode in Geiger-Mode Operation Mingguo Liu, Xiaogang Bai, Chong Hu, IEEE Photonics Technology Letters PhotonicsElectrical EngineeringPhotoelectric SensorGated ModeTelecom Wavelengths	2007	40
Auger profile study of the influence of lattice mismatch on the LPE InGaAsP-InP heterojunction interface M. Feng, L. W. Cook, M. M. Tashima, Applied Physics Letters SemiconductorsElectrical EngineeringAuger Depth ProfilesEngineeringChemical Transition Width	1979	25
The influence of LPE growth techniques on the alloy composition of InGaAsP M. Feng, L. W. Cook, M. M. Tashima, Applied Physics Letters Step CoolingEngineeringCrystal Growth TechnologyStep-cooling TechniqueAlloy Composition	1979	25
Room-temperature electron diffusion lengths in liquid phase epitaxial InGaAsP and InGaAs M. M. Tashima, L. W. Cook, G. E. Stillman Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesElectron Diffusion LengthsSemiconductors	1981	24

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