Publication | Closed Access
Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques
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References
1980
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Materials ScienceMaterial AnalysisEngineeringCrystal Growth TechnologySurface ScienceApplied PhysicsLattice ConstantMolecular Beam EpitaxyLayered MaterialEpitaxial GrowthIngaasp-inp LayersSurface Morphology
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