J. A. Rossi

Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ m

J. J. Hsieh, J. A. Rossi, J.P. Donnelly · Applied Physics Letters · 1976 · 275 citations

Photonics, Electrical Engineering, Optical Materials +13

Electroabsorption in GaAs and its application to waveguide detectors and modulators

G. E. Stillman, C. M. Wolfe, C. O. Bozler et al. · Applied Physics Letters · 1976 · 84 citations

Schottky Barrier Contacts, Photonics, Electrical Engineering +12

Acceptor Luminescence in High-Purity<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type GaAs

J. A. Rossi, C. M. Wolfe, J. O. Dimmock · Physical Review Letters · 1970 · 82 citations

Semiconductors, Acceptor Luminescence, Photoluminescence +12

LPE In1−<i>x</i>Ga<i>x</i>P1−<i>z</i>As<i>z</i> (<i>x</i>∼0.12, <i>z</i>∼0.26) DH laser with multiple thin-layer (&amp;lt;500 Å) active region

E. A. Rezek, N. Holonyak, B. A. Vojak et al. · Applied Physics Letters · 1977 · 80 citations

Engineering, Laser Science, Laser Physics +21

Single-chip 40-channel InP transmitter photonic integrated circuit capable of aggregate data rate of 1.6 Tbit/s

Radhakrishnan Nagarajan, Masashi Kato, J.L. Pleumeekers et al. · Electronics Letters · 2006 · 75 citations

Photonic Device, Photonics, Aggregate Data Rate +12