Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ m

J. J. Hsieh, J. A. Rossi, J.P. Donnelly

Applied Physics Letters

PhotonicsElectrical EngineeringOptical MaterialsRoom-temperature Cw OperationEngineering +11

Electroabsorption in GaAs and its application to waveguide detectors and modulators

G. E. Stillman, C. M. Wolfe, C. O. Bozler, +1

Applied Physics Letters

Schottky Barrier ContactsPhotonicsElectrical EngineeringElectronic DevicesEngineering +10

Acceptor Luminescence in High-Purity<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type GaAs

J. A. Rossi, C. M. Wolfe, J. O. Dimmock

Physical Review Letters

SemiconductorsAcceptor LuminescencePhotoluminescenceEngineeringPhysics +10

LPE In1−<i>x</i>Ga<i>x</i>P1−<i>z</i>As<i>z</i> (<i>x</i>∼0.12, <i>z</i>∼0.26) DH laser with multiple thin-layer (&amp;lt;500 Å) active region

E. A. Rezek, N. Holonyak, B. A. Vojak, +4

Applied Physics Letters

EngineeringLaser ScienceLaser PhysicsLaser ApplicationsLaser Material +19

Single-chip 40-channel InP transmitter photonic integrated circuit capable of aggregate data rate of 1.6 Tbit/s

Radhakrishnan Nagarajan, Masashi Kato, J.L. Pleumeekers, +20

Electronics Letters

Photonic DevicePhotonicsAggregate Data RateInp Transmitter PhotonicOptical Interconnects +10

Unequal electron and hole impact ionization coefficients in GaAs

G. E. Stillman, C. M. Wolfe, J. A. Rossi, +1

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering +10

Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAs

J. A. Rossi, C. M. Wolfe, G. E. Stillman, +1

Solid State Communications

Ii-vi SemiconductorExciton-neutral Donor ComplexesPhotoluminescenceEngineeringPhysics +6

Integrated GaAs-AlGaAs double-heterostructure lasers

C. E. Hurwitz, J. A. Rossi, J. J. Hsieh, +1

Applied Physics Letters

PhotonicsGaas-algaas Double-heterostructure LasersEngineeringSemiconductor LasersApplied Physics +7

Threshold Requirements and Carrier Interaction Effects in GaAs Platelet Lasers (77°K)

J. A. Rossi, D. L. Keune, N. Holonyak, +2

Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringLaser ScienceLaser ApplicationsLaser Material +14

From Visible Light-Emitting Diodes to Large-Scale III–V Photonic Integrated Circuits

Fred Kish, Radhakrishnan Nagarajan, David Welch, +20

Proceedings of the IEEE

Visible Light-emitting DiodeEngineeringDevice IntegrationIntegrated PhotonicsVisible Light-emitting Diodes +14