Electroabsorption in GaAs and its application to waveguide detectors and modulators

Abstract

The electroabsorption coefficient of GaAs has been measured in uniform electric fields at wavelengths from 0.91 to 0.93 μm. These measurements were made using Schottky barrier contacts on low-loss GaAs waveguides consisting of high-purity epitaxial GaAs grown on heavily doped GaAs substrates. The experimental results are in good agreement with theoretical calculations of the Franz-Keldysh effect. Electroabsorption detectors with subnanosecond response time and 100% internal quantum efficiency have been integrated into these waveguides. Small values of avalanche gain have been obtained without any intentional guard-ring structure. Integrated electroabsorption modulators with greater than 20-dB depth of modulation were also fabricated.

References

Page 1

	Year	Citations
Optical Absorption in the Presence of a Uniform Field K. Tharmalingam Physical Review Optical MaterialsEngineeringWave OpticOptical AbsorptionAbsorption Spectroscopy	1963	289
Optical Absorption Edge in GaAs and Its Dependence on Electric Field T. S. Moss Journal of Applied Physics Optical MaterialsEngineeringEnergy BandsAbsorption SpectroscopyPhoton Energy	1961	148
Optical Absorption in an Electric Field J. Callaway Physical Review PhotonicsOptical MaterialsEngineeringPhysicsWave Optic	1964	145
Optical absorption and photoluminescence studies of thin GaAs layers in GaAs–Al<i>x</i>Ga1−<i>x</i>As double heterostructures D. D. Sell, H. C. Casey Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ApplicationsOptical Absorption	1974	130
Integrated GaAs-AlGaAs double-heterostructure lasers C. E. Hurwitz, J. A. Rossi, J. J. Hsieh, Applied Physics Letters PhotonicsGaas-algaas Double-heterostructure LasersEngineeringSemiconductor LasersApplied Physics	1975	59
Electroabsorption in Al<i>y</i> Ga1−<i>y</i> As–Al<i>x</i> Ga1−<i>x</i> As double heterostructures F. K. Reinhart Applied Physics Letters EngineeringOptoelectronic DevicesPhoton EnergyBand GapElectronic Devices	1973	55
High-power narrow-linewidth operation of GaAs diode lasers J. A. Rossi, S. R. Chinn, H. Heckscher Applied Physics Letters Semiconductor TechnologyPhotonicsElectrical EngineeringEngineeringLaser Science	1973	45
Optical striplines for integrated optical circuits in epitaxial GaAs F. A. Blum, Don W. Shaw, W. C. Holton Applied Physics Letters WaveguidesOptical MaterialsEngineeringOptical Transmission SystemIntegrated Circuits	1974	43
Electroabsorption avalanche photodiodes G. E. Stillman, C. M. Wolfe, J. A. Rossi, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringOptical MaterialsUsual Absorption Edge	1974	32
Low-loss high-purity GaAs waveguides for monolithic integrated optical circuits at GaAs laser wavelengths G. E. Stillman, C. M. Wolfe, J. A. Rossi, Applied Physics Letters Semiconductor TechnologyPhotonicsOptical MaterialsEngineeringPhysics	1976	18

Page 1