Applied Physics Letters · 1975 · 59 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignLaser DiodesPhotonic Integrated CircuitsSemiconductor HeterostructuresSemiconductor LasersDouble Heterostructure DevicesDouble HeterostructuresHeterostructure DevicesHeterostructure LasersIntegrated LasersIntegrated Semiconductor LasersLow-threshold Current LasersSemiconductor Laser Fabrication
Integrated structures consisting of a double-heterostructure GaAs-AlGaAs etched-mesa Fabry-Perot laser coupled to a high-purity GaAs waveguide have been fabricated and tested. Room-temperature threshold current densities as low as 7.5 kA/cm2 for 1-μm-thick active layers were measured.
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Optical waveguides in GaAs–AlGaAs epitaxial layers
R. A. Logan, F. K. Reinhart · Journal of Applied Physics · 1973 · 167 citations