Integrated GaAs-AlGaAs double-heterostructure lasers

Abstract

Integrated structures consisting of a double-heterostructure GaAs-AlGaAs etched-mesa Fabry-Perot laser coupled to a high-purity GaAs waveguide have been fabricated and tested. Room-temperature threshold current densities as low as 7.5 kA/cm2 for 1-μm-thick active layers were measured.