Applied Physics Letters · 1973 · 45 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesLaser DiodesLaser OpticsOptical SourcesSemiconductor HeterostructuresSemiconductor LasersDispersive MediaExternal-cavity LasersHigh-power Semiconductor LasersLaser LinewidthLaser Linewidth NarrowingLinewidth NarrowingPower OutputSemiconductor Laser Diodes
By utilizing a dispersive element in an external cavity, we find it possible for pulsed room-temperature GaAs diodes to emit high output power (3 W) into a narrow linewidth (0.4 Å). This narrow-band output is continuously tunable over an ∼ 100-Å range with only a moderate variation in output power. Significantly, these qualities are preserved even at high output power densities (3 × 106 W/cm2).
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HERMITE-GAUSSIAN MODE PATTERNS IN GaAs JUNCTION LASERS
J. C. Dyment · Applied Physics Letters · 1967 · 182 citations
Catastrophic Degradation in GaAs Injection Lasers
H. Kressel, H. Mierop · Journal of Applied Physics · 1967 · 82 citations
Tunable GaAs Laser in an External Dispersive Cavity
R. Ludeke, E. P. Harris · Applied Physics Letters · 1972 · 59 citations