High-power narrow-linewidth operation of GaAs diode lasers

J. A. Rossi, S. R. Chinn, H. Heckscher

Applied Physics Letters · 1973 · 45 citations · 11 references

Concepts

Abstract

By utilizing a dispersive element in an external cavity, we find it possible for pulsed room-temperature GaAs diodes to emit high output power (3 W) into a narrow linewidth (0.4 Å). This narrow-band output is continuously tunable over an ∼ 100-Å range with only a moderate variation in output power. Significantly, these qualities are preserved even at high output power densities (3 × 106 W/cm2).

References

11