Publication | Closed Access
High-power narrow-linewidth operation of GaAs diode lasers
45
Citations
11
References
1973
Year
Semiconductor TechnologyPhotonicsElectrical EngineeringEngineeringLaser ScienceSemiconductor LasersElectronic EngineeringApplied PhysicsGaas Diode LasersDispersive ElementExternal CavityNarrow LinewidthOptoelectronicsHigh-power Lasers
By utilizing a dispersive element in an external cavity, we find it possible for pulsed room-temperature GaAs diodes to emit high output power (3 W) into a narrow linewidth (0.4 Å). This narrow-band output is continuously tunable over an ∼ 100-Å range with only a moderate variation in output power. Significantly, these qualities are preserved even at high output power densities (3 × 106 W/cm2).
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