G. E. Stillman

Impact ionisation in multilayered heterojunction structures

R. Chin, N. Holonyak, G. E. Stillman et al. · Electronics Letters · 1980 · 220 citations

Materials Science, Ion Implantation, Multilayered Heterojunction +12

Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements

L. W. Cook, G. E. Bulman, G. E. Stillman · Applied Physics Letters · 1982 · 159 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +20

The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements

G. E. Bulman, V. M. Robbins, G. E. Stillman · IEEE Transactions on Electron Devices · 1985 · 143 citations

Electron Dead Space, Engineering, Impact Ionization Coefficients +18

Experimental determination of impact ionization coefficients in

G. E. Bulman, V. M. Robbins, Kevin F. Brennan et al. · IEEE Electron Device Letters · 1983 · 135 citations

Room-temperature Electron, Engineering, Impact Ionization Coefficients +9

Electroabsorption in GaAs and its application to waveguide detectors and modulators

G. E. Stillman, C. M. Wolfe, C. O. Bozler et al. · Applied Physics Letters · 1976 · 84 citations

Schottky Barrier Contacts, Photonics, Electrical Engineering +12