G. E. Stillman - Concepedia

Author

G. E. Stillman

University of Illinois Urbana-Champaign

Also Known As

G. E. STILLMAN, G. E. Stillman, G. Stillman, G.E. Stillman, George Stillman

118

Publications

2.9K

Citations

H-Index

Concepts

All Affiliations

University of Illinois Urbana-Champaign Massachusetts Institute of Technology MIT Lincoln Laboratory Rockwell Automation (United States)

About

G. E. Stillman is an author at University of Illinois Urbana-Champaign specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	54	2.3K
2	Applied Physics	28	51	2.2K
3	Natural Sciences	4	4	86
4	Education	1	1	28
5	Medicine	1	1	15

G. E. Stillman

Publications

2.3K

Citations

H-Index

Page 1

	Year	Citations
Impact ionisation in multilayered heterojunction structures R. Chin, N. Holonyak, G. E. Stillman, Electronics Letters Materials ScienceIon ImplantationMultilayered HeterojunctionEngineeringBasic Bulk Materials	1980	220
Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements L. W. Cook, G. E. Bulman, G. E. Stillman Applied Physics Letters EngineeringSemiconductor MaterialsOptoelectronic DevicesSemiconductorsElectronic Devices	1982	159
The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements G. E. Bulman, V. M. Robbins, G. E. Stillman IEEE Transactions on Electron Devices Electron Dead SpaceEngineeringImpact Ionization CoefficientsSemiconductorsIon Implantation	1985	143
Experimental determination of impact ionization coefficients in G. E. Bulman, V. M. Robbins, Kevin F. Brennan, IEEE Electron Device Letters Room-temperature ElectronEngineeringImpact Ionization CoefficientsPhysicsImpact (Mechanics)	1983	135
Electroabsorption in GaAs and its application to waveguide detectors and modulators G. E. Stillman, C. M. Wolfe, C. O. Bozler, Applied Physics Letters Schottky Barrier ContactsPhotonicsElectrical EngineeringElectronic DevicesEngineering	1976	84
The electron velocity-field characteristic for n-In<sub>0.53</sub>Ga<sub>0.47</sub>As at 300 K T. H. Windhorn, L. W. Cook, G. E. Stillman IEEE Electron Device Letters Electrical EngineeringEngineeringPhysicsElectron SpectroscopyElectron Drift Velocities	1982	84
III-V compound semiconductor devices: Optical detectors G. E. Stillman, V. M. Robbins, N. Tabatabaie IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineeringAvalanche Photodiode Structures	1984	78
An analysis of the performance of heterojunction phototransistors for fiber optic communications R.A. Milano, P.D. Dapkus, G. E. Stillman IEEE Transactions on Electron Devices Fiber Optic CommunicationsOptical MaterialsEngineeringOptical Transmission SystemFiber Optics	1982	77
Impact ionization in Al<i>x</i>Ga1−<i>x</i>As for <i>x</i>=0.1–0.4 V. M. Robbins, Susan M. Smith, G. E. Stillman Applied Physics Letters Aluminium NitrideElectrical EngineeringIon ImplantationEngineeringImpact Ionization Coefficients	1988	64
Unequal electron and hole impact ionization coefficients in GaAs G. E. Stillman, C. M. Wolfe, J. A. Rossi, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1974	63

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