V. M. Robbins

Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P/GaP light-emitting diodes

F. A. Kish, Frank M. Steranka, D.C. DeFevere et al. · Applied Physics Letters · 1994 · 258 citations

Materials Science, Electrical Engineering, Optical Materials +14

High performance AlGaInP visible light-emitting diodes

Chia-Chen Kuo, R. M. Fletcher, T. D. Osentowski et al. · Applied Physics Letters · 1990 · 216 citations

White Oled, Photonics, Electrical Engineering +13

The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements

G. E. Bulman, V. M. Robbins, G. E. Stillman · IEEE Transactions on Electron Devices · 1985 · 143 citations

Electron Dead Space, Engineering, Impact Ionization Coefficients +18

Experimental determination of impact ionization coefficients in

G. E. Bulman, V. M. Robbins, Kevin F. Brennan et al. · IEEE Electron Device Letters · 1983 · 135 citations

Room-temperature Electron, Engineering, Impact Ionization Coefficients +9

The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer

R. M. Fletcher, Chia-Chen Kuo, T. D. Osentowski et al. · Journal of Electronic Materials · 1991 · 83 citations

Aluminium Nitride, Optical Materials, Engineering +4