Applied Physics Letters · 1994 · 258 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesLuminescent MaterialsOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresWide Band Gap SemiconductorsDouble Heterostructure DevicesHeterostructure DevicesLampsLed LightingLight-emitting DevicesLuminous TransmittanceRed Light-emitting DiodesTransparent Light-emitting Diodes
Data are presented demonstrating the operation of transparent-substrate (TS) (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes (LEDs) whose efficiency exceeds that afforded by all other current LED technologies in the green to red (560–630 nm) spectral regime. A maximum luminous efficiency of 41.5 lm/W (93.2 lm/A) is realized at λ∼604 nm (20 mA, direct current). The TS (AlxGa1−x)0.5In0.5P/GaP LEDs are fabricated by selectively removing the absorbing n-type GaAs substrate of a p-n (AlxGa1−x)0.5In0.5P double heterostructure LED and wafer bonding a ‘‘transparent’’ n-GaP substrate in its place. The resulting TS (AlxGa1−x)0.5In0.5P/GaP LED lamps exhibit a twofold improvement in light output compared to absorbing-substrate (AS) (AlxGa1−x)0.5In0.5P/GaAs lamps.
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<i>Encyclopedia of Applied Physics</i>
George L. Trigg, Steven J. Rothman, R. Benedek et al. · Physics Today · 1994 · 575 citations
High performance AlGaInP visible light-emitting diodes
Chia-Chen Kuo, R. M. Fletcher, T. D. Osentowski et al. · Applied Physics Letters · 1990 · 217 citations