M. J. Peanasky

Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P/GaP light-emitting diodes

F. A. Kish, Frank M. Steranka, D.C. DeFevere et al. · Applied Physics Letters · 1994 · 258 citations

Engineering, Electrical Engineering, Materials Science +17

Low-resistance Ohmic conduction across compound semiconductor wafer-bonded interfaces

F. A. Kish, D. A. Vanderwater, M. J. Peanasky et al. · Applied Physics Letters · 1995 · 75 citations

Engineering, Electrical Engineering, Materials Science +17

High-efficiency InGaP light-emitting diodes on GaP substrates

L. J. Stinson, Jingxi Yu, S. D. Lester et al. · Applied Physics Letters · 1991 · 35 citations

Engineering, Electrical Engineering, Materials Science +16

Optical study of (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P/GaAs semiconductor alloys by spectroscopic ellipsometry

Huikyo Lee, M. V. Klein, D. E. Aspnes et al. · Journal of Applied Physics · 1993 · 26 citations

Natural Sciences, Materials Engineering, Materials Science +17

The effect of pressure on the optical absorption edge of sulfur to 300 kbar

M. J. Peanasky, C. W. Jurgensen, H. G. Drickamer · The Journal of Chemical Physics · 1984 · 20 citations

Natural Sciences, Chemistry, Materials Science +12