T. D. Osentowski - Concepedia

Author

T. D. Osentowski

Hewlett-Packard (United States)

Also Known As

T. D. Osentowski, T. Osentowski, T.D. Osentowski, Tim Osentowski

Publications

967

Citations

H-Index

Concepts

All Affiliations

Hewlett-Packard (United States)University of Illinois Urbana-Champaign Agilent Technologies (United States)Trimble (United States)

About

T. D. Osentowski is an author at Hewlett-Packard (United States) specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	916
2	Applied Physics	12	13	900
3	Electrical Engineering	6	6	653
4	Chemical Engineering	1	1	16
5	Chemistry	1	1	16

T. D. Osentowski

Publications

936

Citations

H-Index

Page 1

	Year	Citations
Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P/GaP light-emitting diodes F. A. Kish, Frank M. Steranka, D.C. DeFevere, Applied Physics Letters Materials ScienceElectrical EngineeringOptical MaterialsElectronic DevicesMaximum Luminous Efficiency	1994	258
High performance AlGaInP visible light-emitting diodes Chia-Chen Kuo, R. M. Fletcher, T. D. Osentowski, Applied Physics Letters White OledPhotonicsElectrical EngineeringSolid-state LightingEngineering	1990	216
Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555–620 nm spectral region using a thick GaP window layer K. H. Huang, Jingxi Yu, Chia-Chen Kuo, Applied Physics Letters EngineeringOptoelectronic DevicesLuminescence PropertyAlgainp Light-emitting DiodesElectronic Devices	1992	142
The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer R. M. Fletcher, Chia-Chen Kuo, T. D. Osentowski, Journal of Electronic Materials Aluminium NitrideOptical MaterialsEngineeringPhysicsApplied Physics	1991	83
Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers F. A. Kish, J. Caracci, N. Holonyak, Journal of Electronic Materials Materials ScienceEngineeringNative OxidesOptical PropertiesHeterostructure Lasers	1992	48
Impurity-induced layer disordering of high gap In<i>y</i>(Al<i>x</i>Ga1−<i>x</i>)1−<i>y</i>P heterostructures D.G. Deppe, D. W. Nam, N. Holonyak, Applied Physics Letters Oxide HeterostructuresSemiconductorsMaterials ScienceIi-vi SemiconductorEngineering	1988	32
Short-wavelength (≲6400 Å) room-temperature continuous operation of <i>p</i>-<i>n</i> In0.5(Al<i>x</i>Ga1−<i>x</i>)0.5P quantum well lasers John M. Dallesasse, D. W. Nam, D.G. Deppe, Applied Physics Letters EngineeringLaser ScienceLaser PhysicsLaser ApplicationsLaser Material	1988	30
Impurity-induced layer disordering in In0.5(Al<i>x</i> Ga1−<i>x</i>)0.5P-InGaP quantum-well heterostructures: Visible-spectrum-buried heterostructure lasers John M. Dallesasse, W. E. Plano, D. W. Nam, Journal of Applied Physics EngineeringImpurity-induced LayerQuantum-well HeterostructuresOptoelectronic DevicesSemiconductors	1989	21
Reliability and failure mechanisms of oxide VCSELs in non-hermetic enviroments Suning Xie, Robert W. Herrick, Gregory N. De Brabander, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE	2003	20
Native-oxide stripe-geometry In0.5(Al<i>x</i>Ga1−<i>x</i>)0.5P-In0.5Ga0.5P heterostructure laser diodes F. A. Kish, S. J. Caracci, N. Holonyak, Applied Physics Letters Oxide HeterostructuresMaterials ScienceH2o VaporWide-bandgap SemiconductorEngineering	1991	17

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