T. D. Osentowski

Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P/GaP light-emitting diodes

F. A. Kish, Frank M. Steranka, D.C. DeFevere et al. · Applied Physics Letters · 1994 · 258 citations

Materials Science, Electrical Engineering, Optical Materials +14

High performance AlGaInP visible light-emitting diodes

Chia-Chen Kuo, R. M. Fletcher, T. D. Osentowski et al. · Applied Physics Letters · 1990 · 216 citations

White Oled, Photonics, Electrical Engineering +13

Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555–620 nm spectral region using a thick GaP window layer

K. H. Huang, Jingxi Yu, Chia-Chen Kuo et al. · Applied Physics Letters · 1992 · 142 citations

Engineering, Optoelectronic Devices, Luminescence Property +17

The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer

R. M. Fletcher, Chia-Chen Kuo, T. D. Osentowski et al. · Journal of Electronic Materials · 1991 · 83 citations

Aluminium Nitride, Optical Materials, Engineering +4

Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers

F. A. Kish, J. Caracci, N. Holonyak et al. · Journal of Electronic Materials · 1992 · 48 citations

Materials Science, Engineering, Native Oxides +6