R. M. Fletcher - Concepedia

Author

R. M. Fletcher

Hewlett-Packard (United States)

Also Known As

R. Fletcher, R. M. Fletcher, R.M Fletcher, R.M. FLETCHER, R.M. Fletcher, Robert Fletcher, Robert M. Fletcher

Publications

2.7K

Citations

H-Index

Concepts

All Affiliations

Hewlett-Packard (United States)University of Illinois Urbana-Champaign Trimble (United States)Lighting Innovation (United States)Cornell University

About

R. M. Fletcher is an author at Hewlett-Packard (United States) specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	18	2.5K
2	Applied Physics	15	16	2.3K
3	Electrical Engineering	10	10	2.2K
4	Physics	8	8	282
5	Materials Science	5	5	376

R. M. Fletcher

Publications

2.6K

Citations

H-Index

Page 1

	Year	Citations
Illumination with solid state lighting technology D. A. Steigerwald, J Bhat, D. M. Collins, IEEE Journal of Selected Topics in Quantum Electronics Optical MaterialsEngineeringLighting TechnologyLuminescence PropertySolid State Equivalent	2002	1.1K
Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P/GaP light-emitting diodes F. A. Kish, Frank M. Steranka, D.C. DeFevere, Applied Physics Letters Materials ScienceElectrical EngineeringOptical MaterialsElectronic DevicesMaximum Luminous Efficiency	1994	258
High Power LEDs - Technology Status and Market Applications Frank M. Steranka, J Bhat, D. M. Collins, physica status solidi (a) White OledElectrical EngineeringSolid-state LightingEngineeringDisplay Technology	2002	224
High performance AlGaInP visible light-emitting diodes Chia-Chen Kuo, R. M. Fletcher, T. D. Osentowski, Applied Physics Letters White OledPhotonicsElectrical EngineeringSolid-state LightingEngineering	1990	216
Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes Werner Götz, R. S. Kern, C.H Chen, Materials Science and Engineering B SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringHigh Efficiency	1999	165
Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555–620 nm spectral region using a thick GaP window layer K. H. Huang, Jingxi Yu, Chia-Chen Kuo, Applied Physics Letters EngineeringOptoelectronic DevicesLuminescence PropertyAlgainp Light-emitting DiodesElectronic Devices	1992	142
GaAs light-emitting diodes fabricated on Ge-coated Si substrates R. M. Fletcher, David K. Wagner, J. M. Ballantyne Applied Physics Letters	1984	84
The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer R. M. Fletcher, Chia-Chen Kuo, T. D. Osentowski, Journal of Electronic Materials Aluminium NitrideOptical MaterialsEngineeringPhysicsApplied Physics	1991	83
Antiphase boundaries in GaAs N.-H. Cho, Bruno C. De Cooman, C. B. Carter, Applied Physics Letters SemiconductorsIi-vi SemiconductorEngineeringPhysicsAntiphase Boundaries	1985	70
Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers F. A. Kish, J. Caracci, N. Holonyak, Journal of Electronic Materials Materials ScienceEngineeringNative OxidesOptical PropertiesHeterostructure Lasers	1992	48

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