Acceptor Luminescence in High-Purity<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type GaAs

Abstract

Photoluminescence of epitaxial GaAs in a magnetic field has established the origin of several recombination transitions 20 to 40 meV off the band edge. The data indicate that two acceptor levels are present in high purity material and that two free-electron-neutral-acceptor and two donor-acceptor pair bands are observed in photoluminescence at low temperatures.