Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ m

Abstract

Room-temperature cw operation has been achieved for stripe-geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm. The heterostructures were grown by liquid-phase epitaxy on melt-grown InP substrates, and stripes were defined by using proton bombardment to produce high-resistance current-confining regions.