Applied Physics Letters · 1977 · 80 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser PhysicsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsSemiconductor Thin FilmsDouble HeterostructuresHeteroepitaxyHeterojunctionsHeterostructure LasersHeterostructure OptoelectronicsIntegrated Semiconductor LasersQuantum Size EffectsSize Effects
A liquid-phase-epitaxial (LPE) double-heterojunction (DH) laser structure with an ∼1-μm ’’active region’’ consisting of ≳20 In1−xGaxP1−zAsz and InP lattice-matched thin layers is described. The thin-layer dimensions are small enough (<500 Å) to make quantum size effects relevant.
8
<i>In situ</i> in etching technique for l.p.e. InP
V. L. Wrick, G. Scilla, L.F. Eastman et al. · Electronics Letters · 1976 · 32 citations