LPE In1−<i>x</i>Ga<i>x</i>P1−<i>z</i>As<i>z</i> (<i>x</i>∼0.12, <i>z</i>∼0.26) DH laser with multiple thin-layer (&amp;lt;500 Å) active region

Abstract

A liquid-phase-epitaxial (LPE) double-heterojunction (DH) laser structure with an ∼1-μm ’’active region’’ consisting of ≳20 In1−xGaxP1−zAsz and InP lattice-matched thin layers is described. The thin-layer dimensions are small enough (&amp;lt;500 Å) to make quantum size effects relevant.