E. A. Rezek

Room-temperature laser operation of quantum-well Ga(1−<i>x</i>)Al<i>x</i>As-GaAs laser diodes grown by metalorganic chemical vapor deposition

Russell D. Dupuis, P.D. Dapkus, N. Holonyak et al. · Applied Physics Letters · 1978 · 177 citations

Engineering, Electrical Engineering, Materials Science +17

LPE In1−<i>x</i>Ga<i>x</i>P1−<i>z</i>As<i>z</i> (<i>x</i>∼0.12, <i>z</i>∼0.26) DH laser with multiple thin-layer (&amp;lt;500 Å) active region

E. A. Rezek, N. Holonyak, B. A. Vojak et al. · Applied Physics Letters · 1977 · 80 citations

Engineering, Electrical Engineering, Materials Science +17

Composition dependence of Au/In<i>x</i>Al1−<i>x</i>As Schottky barrier heights

Chia‐Liang Lin, Paul K. Chu, Albert L. Kellner et al. · Applied Physics Letters · 1986 · 52 citations

Engineering, Materials Engineering, Materials Science +17

Confined-carrier luminescence of a thin In1−<i>x</i>Ga<i>x</i>P1−<i>z</i>As<i>z</i> well (<i>x</i>∼0.13, <i>z</i>∼0.29, ∼400 Å) in an InP <i>p</i>-<i>n</i> junction

E. A. Rezek, H. Shichijo, B. A. Vojak et al. · Applied Physics Letters · 1977 · 48 citations

Natural Sciences, Materials Science, Physics +15

Temperature dependence of threshold current for coupled multiple quantum-well In1−<i>x</i>Ga<i>x</i> P1−<i>z</i>As<i>z</i>-InP heterostructure laser diodes

E. A. Rezek, N. Holonyak, B. K. Fuller · Journal of Applied Physics · 1980 · 42 citations

Engineering, Electrical Engineering, Materials Science +17