P.D. Dapkus - Concepedia

Author

P.D. Dapkus

Also Known As

P D Dapkus, P. D. Dapkus, P. DANIEL DAPKUS, P. Daniel Dapkus, P. Dapkus, P.D Dapkus, P.D. Dapkus, PD. DAPKUS, S. J. Choi

261

Publications

7.2K

Citations

H-Index

Concepts

All Affiliations

Rockwell Automation (United States)University of Illinois Urbana-Champaign University of Southern California

About

P.D. Dapkus is an author at Rockwell Automation (United States) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	41	107	6.3K
2	Applied Physics	41	104	6K
3	Natural Sciences	4	4	282
4	Chemistry	4	4	283
5	Chemical Engineering	2	2	71

P.D. Dapkus

117

Publications

6.9K

Citations

H-Index

Page 1

	Year	Citations
Disorder of an AlAs-GaAs superlattice by impurity diffusion W. D. Laidig, N. Holonyak, M. D. Camras, Applied Physics Letters Materials ScienceSemiconductorsEngineeringPhysicsCrystalline Defects	1981	598
Quantum-well heterostructure lasers N. Holonyak, R. M. Kolbas, Russell D. Dupuis, IEEE Journal of Quantum Electronics Wide-bandgap SemiconductorEngineeringLaser ApplicationsLaser PhysicsLaser Material	1980	541
Ultralow threshold current vertical-cavity surface-emittinglasersobtained with selective oxidation Guili Yang, M.H. MacDougal, P.D. Dapkus Electronics Letters	1995	299
High purity GaAs prepared from trimethylgallium and arsine P.D. Dapkus, H. M. Manasevit, K. L. Hess, Journal of Crystal Growth Materials EngineeringSemiconductorsElectrical EngineeringEngineeringApplied Physics	1981	197
Metalorganic Chemical Vapor Deposition P.D. Dapkus Annual Review of Materials Science Materials ScienceMetallic MaterialsAdditive Manufacturing TechniquesEngineeringMechanical Properties	1982	197
Disorder of an AlAs-GaAs superlattice by silicon implantation J. J. Coleman, P.D. Dapkus, C. G. Kirkpatrick, Applied Physics Letters Materials ScienceSemiconductors126-Layer Alas-gaas SuperlatticeSemiconductor TechnologyEngineering	1982	187
GaAs Nanowire Array Solar Cells with Axial p–i–n Junctions Maoqing Yao, Ningfeng Huang, Sen Cong, Nano Letters Wire DiameterEngineeringOrganic Solar CellOptoelectronic DevicesPlasmon-enhanced Photovoltaics	2014	180
Room-temperature laser operation of quantum-well Ga(1−<i>x</i>)Al<i>x</i>As-GaAs laser diodes grown by metalorganic chemical vapor deposition Russell D. Dupuis, P.D. Dapkus, N. Holonyak, Applied Physics Letters Aluminium NitrideEngineeringLaser ApplicationsLaser MaterialDh Lasers	1978	176
Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD Steven P. DenBaars, B. Y. Maa, P.D. Dapkus, Journal of Crystal Growth Materials EngineeringIi-vi SemiconductorElectrical EngineeringEngineeringPhysics	1986	169
IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavity N. Holonyak, W. D. Laidig, M. D. Camras, Applied Physics Letters Wide-bandgap SemiconductorEngineeringCavity QedLaser ApplicationsDisk-shaped Ir-red	1981	160

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