R. M. Kolbas - Concepedia

Author

R. M. Kolbas

North Carolina State University

Also Known As

R. Kolbas, R. M. KOLBAS, R. M. Kolbas, R.M Kolbas, R.M. Kolbas, Robert Kolbas, Robert M. Kolbas

173

Publications

5.4K

Citations

H-Index

Concepts

All Affiliations

North Carolina State University University of Illinois Urbana-Champaign Rockwell Automation (United States)University of California, Santa Barbara Omega Optics (United States)

About

R. M. Kolbas is an author at North Carolina State University specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	70	4.8K
2	Applied Physics	34	69	4.8K
3	Chemistry	2	2	51
4	Natural Sciences	1	1	85
5	Computer Engineering	1	1	11

R. M. Kolbas

Publications

5.1K

Citations

H-Index

Page 1

	Year	Citations
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements John F. Muth, J. H. Lee, I. K. Shmagin, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringAbsorption SpectroscopyOptical Properties	1997	746
Quantum-well heterostructure lasers N. Holonyak, R. M. Kolbas, Russell D. Dupuis, IEEE Journal of Quantum Electronics Wide-bandgap SemiconductorEngineeringLaser ApplicationsLaser PhysicsLaser Material	1980	541
Optical and structural properties of epitaxial MgxZn1−xO alloys A. K. Sharma, J. Narayan, John F. Muth, Applied Physics Letters Optical MaterialsEngineeringEpitaxial Mgxzn1−xo AlloysOptoelectronic DevicesOptical Properties	1999	389
Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition John F. Muth, R. M. Kolbas, A. K. Sharma, Journal of Applied Physics Materials ScienceElectrical EngineeringPhotoluminescenceEngineeringEpitaxial Growth	1999	356
Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition M. Asif Khan, J. N. Kuznia, J. M. Van Hove, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringAluminium NitrideEngineering	1991	171
Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys John F. Muth, J.D. Brown, Mark A. Johnson, MRS Internet Journal of Nitride Semiconductor Research	1999	166
Optical characterization of pseudomorphic In<i>x</i>Ga1−<i>x</i>As–GaAs single-quantum-well heterostructures Neal G. Anderson, W. D. Laidig, R. M. Kolbas, Journal of Applied Physics SemiconductorsMaterials ScienceWide-bandgap SemiconductorEngineeringPhysics	1986	139
Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE L.‐W. Yin, You Mi Hwang, J.H. Lee, IEEE Electron Device Letters Lt GaasSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1990	132
Visible-blind GaN Schottky barrier detectors grown on Si(111) A. Osinsky, S. Gangopadhyay, Jinwei Yang, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1998	127
Carrier collection in a semiconductor quantum well H. Shichijo, R. M. Kolbas, N. Holonyak, Solid State Communications SemiconductorsEngineeringCarrier CollectionPhysicsQuantum Device	1978	125

Page 1