J. N. Kuznia

High electron mobility transistor based on a GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunction

M. Asif Khan, Amal R. Bhattarai, J. N. Kuznia et al. · Applied Physics Letters · 1993 · 874 citations

Engineering, Electrical Engineering, Materials Science +17

High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1992 · 387 citations

Engineering, Materials Engineering, Materials Science +15

Metal semiconductor field effect transistor based on single crystal GaN

M. Asif Khan, J. N. Kuznia, Amal R. Bhattarai et al. · Applied Physics Letters · 1993 · 359 citations

Engineering, Electrical Engineering, Materials Science +17

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1994 · 354 citations

Engineering, Electrical Engineering, Materials Science +17

Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition

E. R. Glaser, T. A. Kennedy, K. Doverspike et al. · Physical review. B, Condensed matter · 1995 · 327 citations

Natural Sciences, Materials Engineering, Materials Science +17