D. T. Olson

High electron mobility transistor based on a GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunction

M. Asif Khan, Amal R. Bhattarai, J. N. Kuznia et al. · Applied Physics Letters · 1993 · 865 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +9

High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1992 · 383 citations

Materials Science, Photonics, Electrical Engineering +14

Metal semiconductor field effect transistor based on single crystal GaN

M. Asif Khan, J. N. Kuznia, Amal R. Bhattarai et al. · Applied Physics Letters · 1993 · 357 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +8

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1994 · 352 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition

E. R. Glaser, T. A. Kennedy, K. Doverspike et al. · Physical review. B, Condensed matter · 1995 · 327 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16