M. Asif Khan

Metal semiconductor field effect transistor based on single crystal GaN

M. Asif Khan, J. N. Kuznia, Amal R. Bhattarai et al. · Applied Physics Letters · 1993 · 359 citations

Engineering, Electrical Engineering, Materials Science +17

Luminescence from stacking faults in gallium nitride

R. Liu, A. Bell, F. A. Ponce et al. · Applied Physics Letters · 2005 · 332 citations

Natural Sciences, Materials Engineering, Materials Science +17

Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates

J. N. Kuznia, M. Asif Khan, D. T. Olson et al. · Journal of Applied Physics · 1993 · 193 citations

Natural Sciences, Materials Engineering, Materials Science +17

Schottky barrier photodetector based on Mg-doped <i>p</i>-type GaN films

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1993 · 188 citations

Engineering, Electrical Engineering, Materials Science +17

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

M. Asif Khan, Q. Chen, Jinwei Yang et al. · IEEE Electron Device Letters · 1996 · 180 citations

Engineering, Electrical Engineering, Materials Science +17