High purity GaAs prepared from trimethylgallium and arsine

The incorporation and characterisation of acceptors in epitaxial GaAs

D.J. Ashen, P. J. Dean, D.T.J. Hurle et al. · Journal of Physics and Chemistry of Solids · 1975 · 560 citations

Engineering, Electrical Engineering, Materials Science +12

SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES

H. M. Manasevit · Applied Physics Letters · 1968 · 422 citations

Natural Sciences, Materials Engineering, Materials Science +15

The Use of Metal-Organics in the Preparation of Semiconductor Materials

H. M. Manasevit, W. I. Simpson · Journal of The Electrochemical Society · 1969 · 360 citations

Engineering, Chemistry, Materials Science +12

Electrical characterization of epitaxial layers

G. E. Stillman, C. M. Wolfe · Thin Solid Films · 1976 · 206 citations

Natural Sciences, Electrical Engineering, Materials Science +14

Room-temperature operation of Ga(1−<i>x</i>)Al<i>x</i>As/GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition

Russell D. Dupuis, P.D. Dapkus · Applied Physics Letters · 1977 · 156 citations

Engineering, Electrical Engineering, Materials Science +17