D.J. Ashen

The incorporation and characterisation of acceptors in epitaxial GaAs

D.J. Ashen, P. J. Dean, D.T.J. Hurle et al. · Journal of Physics and Chemistry of Solids · 1975 · 559 citations

Applied Physics, Epitaxial Gaas, Molecular Beam Epitaxy +2

Organometallic growth of II–VI compounds

J.B. Mullin, S.J.C. Irvine, D.J. Ashen · Journal of Crystal Growth · 1981 · 176 citations

Inorganic Chemistry, Organometallic Growth, Chemistry +2

The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenide

A. M. White, P. Dean, L. L. Taylor et al. · Journal of Physics C Solid State Physics · 1972 · 109 citations

Engineering, Chemistry, Luminescence Property +16

Acceptor levels in gallium arsenide (luminescence measurements)

A. M. White, P. Dean, D.J. Ashen et al. · Journal of Physics C Solid State Physics · 1973 · 48 citations

Ii-vi Semiconductor, Ground State, Photoluminescence +14

Automatic electrochemical profiling of carrier concentration in indium phosphide

T. Ambridge, D.J. Ashen · Electronics Letters · 1979 · 25 citations

Engineering, Depth Range, Chemistry +16