The incorporation and characterisation of acceptors in epitaxial GaAs

References

Page 1

	Year	Citations
Vapor pressures and phase equilibria in the GaAs system John R. Arthur Journal of Physics and Chemistry of Solids	1967	388
Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band D. M. Eagles Journal of Physics and Chemistry of Solids SemiconductorsIi-vi SemiconductorRecombination RadiationConduction BandEngineering	1960	329
Phase equilibria in the GaAs and the GaP systems C. D. Thurmond Journal of Physics and Chemistry of Solids SemiconductorsEngineeringPhysicsPhase EquilibriumApplied Physics	1965	246
Solubility of III–V Compound Semiconductors in Column III Liquids R. N. Hall Journal of The Electrochemical Society EngineeringRegular SolutionsChemistrySolution (Chemistry)Thermodynamics	1963	214
Free-to-Bound and Bound-to-Bound Transitions in CdS Konrad Colbow Physical Review EngineeringExcitation Energy TransferChemistryLuminescence PropertyElectronic Excited State	1966	171
Two-Electron Transitions in the Luminescence of Excitons Bound to Neutral Donors in Gallium Phosphide P. J. Dean, J. D. Cuthbert, D. G. Thomas, Physical Review Letters Localized Excited StateEngineeringExcitation Energy TransferNeutral DonorsChemistry	1967	152
Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layers J.V. DiLorenzo Journal of Crystal Growth Epitaxial GrowthPhysicsApplied PhysicsEpitaxial GaasEpitaxial Layers	1972	134
Angular Momentum Theory and Localized States in Solids. Investigation of Shallow Acceptor States in Semiconductors N. O. Lipari, A. Baldereschi Physical Review Letters Spectral TheoryLocalized Excited StateEngineeringAngular Momentum TheoryShallow Acceptor States	1970	124
Calculations of point defect concentrations and nonstoichiometry in GaAs R.M. Logan, D.T.J. Hurle Journal of Physics and Chemistry of Solids Electrical EngineeringEngineeringPoint Defect ConcentrationsApplied PhysicsDefect Formation	1971	120
The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenide A. M. White, P. Dean, L. L. Taylor, Journal of Physics C Solid State Physics EngineeringChemistryLuminescence PropertyElectronic Excited StateQuantum Materials	1972	109

Page 1