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Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region
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References
1978
Year
Heterojunction PhotodiodesEngineeringCrystal Growth TechnologyOptoelectronic DevicesSemiconductorsOptical PropertiesQuantum MaterialsLattice-matched IngaaspMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorMaterials SciencePhotonicsDistribution CoefficientsLiquid-phase Epitaxial GrowthPhotoluminescencePhysicsOptoelectronic Materials1.15–1.31-μM Spectral RegionPhotoelectric MeasurementCondensed Matter PhysicsApplied PhysicsQuantum Photonic DeviceOptoelectronicsOptical Devices
The distribution coefficients for the growth of lattice-matched InGaAsP on (100) -InP substrates in the 1.15–1.31-μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ⩾48% at 1.27 μm.
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