The electron velocity-field characteristic for n-In_0.53Ga_0.47As at 300 K

Abstract

Electron drift velocities in n-type In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</inf> As have been measured at 300 K using a microwave time-of-flight technique at electric field strengths from about 10 kV/cm to 104 kV/cm. The electron velocity-field characteristic for n-type In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</inf> As exhibits a larger negative differential mobility and a lower high field velocity than is obtained with GaAs.