Publication | Closed Access
Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN
22
Citations
6
References
2002
Year
Materials ScienceWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineeringSub-surface DamageSurface ScienceApplied PhysicsAluminum Gallium NitrideHigh Temperature HydrogenGan Power DeviceBulk GanCategoryiii-v Semiconductor
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