Jaime A. Freitas

Some effects of oxygen impurities on AlN and GaN

Glen A. Slack, L. J. Schowalter, Donald T. Morelli et al. · Journal of Crystal Growth · 2002 · 405 citations

Materials Engineering, Aluminium Nitride, Engineering +5

Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga₂O₃

Marko J. Tadjer, John L. Lyons, Neeraj Nepal et al. · ECS Journal of Solid State Science and Technology · 2019 · 219 citations · Full text

Wide-bandgap Semiconductor, Optical Materials, Engineering +22

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

Subrina Rafique, Lu Han, Marko J. Tadjer et al. · Applied Physics Letters · 2016 · 215 citations

Materials Science, Oxide Heterostructures, Thin Film Physics +13

Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

P. B. Klein, Jaime A. Freitas, S.C. Binari et al. · Applied Physics Letters · 1999 · 187 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

H. Marchand, Lingyan Zhao, N. Zhang et al. · Journal of Applied Physics · 2001 · 181 citations

Materials Science, Semiconductors, Electrical Engineering +14