V. Dmitriev

Electric breakdown in GaN <i>p-n</i> junctions

V. Dmitriev, K. G. Irvine, C. H. Carter et al. · Applied Physics Letters · 1996 · 113 citations

Semiconductors, Electrical Engineering, Engineering +12

Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN

M. A. Reshchikov, Alexander Kvasov, Marilyn F. Bishop et al. · Physical Review B · 2011 · 101 citations

Wide-bandgap Semiconductor, Rate Equations, Electrical Engineering +14

Schottky barriers on n-GaN grown on SiC

Elena Kalinina, N.I. Kuznetsov, V. Dmitriev et al. · Journal of Electronic Materials · 1996 · 99 citations

Electrical Engineering, Engineering, Schottky Barriers +2

Structural characterization and strain relaxation in porous GaN layers

M. G. Mynbaeva, A. N. Titkov, A.K Kryganovskii et al. · Applied Physics Letters · 2000 · 93 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Spontaneous and stimulated emission from photopumped GaN grown on SiC

A. S. Zubrilov, D. Tsvetkov, V. Dmitriev et al. · Applied Physics Letters · 1995 · 87 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +14