V. Dmitriev

Electric breakdown in GaN <i>p-n</i> junctions

V. Dmitriev, K. G. Irvine, C. H. Carter et al. · Applied Physics Letters · 1996 · 114 citations

Engineering, Electrical Engineering, Materials Science +17

Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN

M. A. Reshchikov, Alexander Kvasov, Marilyn F. Bishop et al. · Physical Review B · 2011 · 104 citations

Engineering, Materials Engineering, Materials Science +17

Schottky barriers on n-GaN grown on SiC

Elena Kalinina, N.I. Kuznetsov, V. Dmitriev et al. · Journal of Electronic Materials · 1996 · 99 citations

Engineering, Electrical Engineering, Materials Science +14

Structural characterization and strain relaxation in porous GaN layers

M. G. Mynbaeva, A. N. Titkov, A.K Kryganovskii et al. · Applied Physics Letters · 2000 · 93 citations

Natural Sciences, Materials Engineering, Materials Science +16

Spontaneous and stimulated emission from photopumped GaN grown on SiC

A. S. Zubrilov, D. Tsvetkov, V. Dmitriev et al. · Applied Physics Letters · 1995 · 88 citations

Engineering, Materials Engineering, Materials Science +17