M. A. Reshchikov

Luminescence properties of defects in GaN

M. A. Reshchikov, H. Morkoç̌ · Journal of Applied Physics · 2005 · 1.9K citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes

D. O. Demchenko, I. C. Diallo, M. A. Reshchikov · Physical Review Letters · 2013 · 238 citations

Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities

M. A. Reshchikov, Gyu‐Chul Yi, Bruce W. Wessels · Physical review. B, Condensed matter · 1999 · 233 citations

Wide-bandgap Semiconductor, Engineering, Mg-doped Gan +16

Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films

M. A. Reshchikov, Roman Y. Korotkov · Physical review. B, Condensed matter · 2001 · 198 citations

Wide-bandgap Semiconductor, Electrical Engineering, Solid-state Lighting +14

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

M. A. Reshchikov, D. O. Demchenko, A. Usikov et al. · Physical Review B · 2014 · 182 citations · Full text

Wide-bandgap Semiconductor, Gl Band, Photoluminescence +13