Roman Y. Korotkov

Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films

M. A. Reshchikov, Roman Y. Korotkov · Physical review. B, Condensed matter · 2001 · 198 citations

Wide-bandgap Semiconductor, Electrical Engineering, Solid-state Lighting +14

Optical properties of the deep Mn acceptor in GaN:Mn

Roman Y. Korotkov, J. M. Gregie, Bruce W. Wessels · Applied Physics Letters · 2002 · 167 citations

Materials Science, Semiconductor Technology, Wide-bandgap Semiconductor +13

Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers

M. A. Reshchikov, F. Shahedipour, Roman Y. Korotkov et al. · Journal of Applied Physics · 2000 · 108 citations

Photoluminescence Band, Undoped Epitaxial Gan, Electrical Engineering +14

Electrical properties of <i>p</i>-type GaN:Mg codoped with oxygen

Roman Y. Korotkov, J. M. Gregie, Bruce W. Wessels · Applied Physics Letters · 2001 · 98 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +9

Preferred orientations in polycrystalline SnO2 films grown by atmospheric pressure chemical vapor deposition

Roman Y. Korotkov, P. Ricou, A. J. E. Farran · Thin Solid Films · 2005 · 89 citations

Materials Engineering, Materials Science, Preferred Orientations +10